CHA2063A ref. : dscha20630096 -05-apr-00 1/10 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 7-13ghz low noise amplifier gaas monolithic microwave ic description the CHA2063A is a two-stage wide band monolithic low noise amplifier. the circuit is manufactured with a pm-hemt process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in chip form or in an hermetic leadless ceramic package. main features broad band performance 7-13ghz 2.0db noise figure, 8-13ghz 19db gain low dc power consumption, 40ma 18dbm 3rd order intercept point chip size : 1,52 x 1,27 x 0.1mm pin out 1 - nc 2 - nc 3 - rf output 4 - nc 5 - vdd 6 - rf input main characteristics tamb = +25c, package form symbol parameter min typ max unit nf noise figure, 7-8ghz noise figure, 8-13ghz 2.5 2.0 3.0 2.5 db g gain 16 19 db d g gain flatness 2.0 db esd protections : electrostatic discharge sensitive device observe handling precautions !
CHA2063A 7-13ghz low noise amplifier ref. : dscha20630096 -05-apr-00 2/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics package form tamb = +25c, vd = +4v symbol parameter test condi tions min typ max unit fop operating frequency range 7 13 ghz g gain 16 19 db d g gain flatness 2 db nf noise figure 7-8 ghz noise figure 8-13 ghz 2.5 2.0 3.0 2.5 db vswrin input vswr 2.0:1 2.5:1 vswrout ouput vswr 2.0:1 2.5:1 p1db output power at 1db gain compression f=10 ghz 8 dbm ip3 3rd order intercept point 18 dbm id drain bias current 40 60 ma absolute maximum ratings tamb = +25c symbol parameter values unit vd drain bias voltage (3) 5.0 v pin maximum peak input power overdrive (2) +15 dbm top operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these paramaters may cause permanent damage. (2) duration < 1s. (3)see chip biasing option page 9/10
7-13ghz low noise amplifier CHA2063A ref. : dscha20630096 -05-apr-00 3/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics chip form tamb = +25c, vd = +4v symbol parameter test condi tions min typ max unit fop operating frequency range (1) 7 12 ghz g gain 17 19 db d g gain flatness 2 db nf noise figure 7-8 ghz noise figure 8-12 ghz 2.5 2.0 3.0 2.5 db vswrin input vswr (1) 2.0:1 3.0:1 vswrout ouput vswr (1) 2.0:1 3.0:1 p1db output power at 1db gain compression f=10 ghz 8 dbm ip3 3rd order intercept point 18 dbm id drain bias current 40 80 ma (1) these values are representative of on-wafer mea surements that are made without bonding wires at the rf ports. when the chip is con nected with typical 0.3 nh input and output bonding wires, the indicated parameter value s are close to those of the CHA2063A packaged product.
CHA2063A 7-13ghz low noise amplifier ref. : dscha20630096 -05-apr-00 4/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer scattering parameters tamb = +25c vd = 4.0v ; vg1 = vg2 = +2.5volt ; id = 40ma ( a,b ,c,d & e not connected ) (see chip biasing option page 9/10) freq ghz s11 db s11 s12 db s12 s21 db s21 s22 db s22 5.00 -0.86 -91.7 --65.97 -63.6 6.08 -175.1 -7.99 -1 31.3 5.50 -1.66 -109.6 -57.28 -77.7 11.49 152.4 -9.91 -1 39.3 6.00 -3.56 -131.8 -50.70 -105.2 16.03 113.4 -11.62 -143.8 6.50 -7.75 -153.2 -46.25 -137.6 18.99 69.3 -12.74 - 150.7 7.00 -14.77 -159.2 -43.76 -167.7 20.39 27.7 -14.62 -164.1 7.50 -21.16 -116.9 -42.21 166.7 20.79 -9.1 -18.09 - 179.8 8.00 -19.40 -79.1 -41.19 145.2 20.89 -40.9 -24.49 1 60.0 8.50 -16.83 -61.4 -40.39 127.8 20.76 -69.6 -34.60 3 8.5 9.00 -14.68 -53.7 -39.78 111.7 20.45 -95.4 -23.38 - 9.1 9.50 -12.52 -52.6 -39.31 96.9 20.16 -119.5 -18.53 - 23.3 10.00 -10.61 -57.4 -38.85 83.9 19.79 -141.8 -15.76 -31.8 10.50 -9.31 -65.5 -38.51 72.6 19.36 -162.9 -13.58 - 40.2 11.00 -8.38 -74.2 -38.14 62.0 18.85 176.6 -11.92 -4 8.5 11.50 -7.71 -83.7 -37.74 52.8 18.41 157.3 -10.67 -5 7.1 12.00 -7.26 -93.4 -37.17 44.1 17.94 138.1 -9.74 -65 .8 12.50 -6.86 -103.8 -36.62 35.4 17.40 119.5 -9.01 -7 3.5 13.00 -6.57 -114.6 -35.91 27.3 16.84 101.6 -8.54 -8 1.7 13.50 -6.34 -126.4 -35.11 18.2 16.26 83.8 -8.21 -88 .8 14.00 -6.18 -139.4 -34.27 8.5 15.65 66.5 -8.05 -95. 7 14.50 -6.16 -153.5 -33.41 -1.9 15.01 49.1 -8.03 -10 1.7 15.00 -6.25 -169.0 -32.67 -13.3 14.35 31.7 -8.02 -1 06.9
7-13ghz low noise amplifier CHA2063A ref. : dscha20630096 -05-apr-00 5/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical results in package typical response (in package sij ) : tamb = +25c vd = 4.0v ; ; id = 40ma gain slope : -0.015db/c id slope : -0.025ma/c 0 5 10 15 20 25 5 6 7 8 9 10 11 12 13 14 15 frequency (ghz) gain (db) 0 1 2 3 4 5 nf (db) -40 c +80 c 25 c typical gain and noise figure measurements in pack age -40 -35 -30 -25 -20 -15 -10 -5 0 5 6 7 8 9 10 11 12 13 14 15 frequency (ghz) s11, s22 (db) s11 s22 _40 c _40 c +80 c +80 c typical matching measurements in package.
CHA2063A 7-13ghz low noise amplifier ref. : dscha20630096 -05-apr-00 6/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical output power measurements in package tamb = +25c vd = 4.0v ; id = 40ma f=10 ghz 12 13 14 15 16 17 18 19 20 -25 -24 -23 -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 - 8 -7 -6 -5 pin (dbm) gain (db) -6 -4 -2 0 2 4 6 8 10 pout (dbm) pout gain
7-13ghz low noise amplifier CHA2063A ref. : dscha20630096 -05-apr-00 7/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical results in chip chip typical response ( on wafer sij ) : tamb = +25c vd = 4.0v ; vg1 = vg2 = +2.5volt ; id = 40ma ( a,b ,c,d & e not connected ) (see chip biasing option page 9/10) 0 5 10 15 20 25 5 6 7 8 9 10 11 12 13 14 15 frequency (ghz) s21 (db) 0 2 4 6 8 10 nf (db) s21 nf typical gain and noise figure measurements on wafe r. -40 -35 -30 -25 -20 -15 -10 -5 0 5 6 7 8 9 10 11 12 13 14 15 frequency (db) s11, s22 (db) s11 s22 typical matching measurements on wafer.
CHA2063A 7-13ghz low noise amplifier ref. : dscha20630096 -05-apr-00 8/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip schematic and pad identification g1 g nd g2 vd rfin rfout a b c gn d gn d d e 1520m 1270m pad size 100x100m, chip thickness 100m 21 21 31 21 21 2k 1k 55 2k 1k 55 dimensions : 1520 x 1270m 35m
7-13ghz low noise amplifier CHA2063A ref. : dscha20630096 -05-apr-00 9/10 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical chip assembly c = 100pf vd in out chip biasing options this chip is self-biased, and flexibility is provid ed by the access to number of pads. the internal dc electrical schematic is given in order to use these pads in a safe way. g 2 d e 21 2 1 2k 1k g1 vd a b c 21 21 31 2k 1k 55 5 5 the two requirements are : n1 : not exceed vds = 3.5volt (internal drain to s ource voltage). n2 : biased in such a way to limit vgs positive va lue (internal gate to source voltage). we propose two standard biasing : low noise and low consumption : vd = 4v and b & d grounded. all the other pads non connected ( nc ). idd = 40ma & pout-1db = +8dbm typical. ( equivalent to a,b,c,d,e : nc and vd=4v ; g1=+2 .5v ; g2=+2.5v). low noise and high output power : vd = 5v and b & e grounded. all the other pads non connected ( nc ). idd = 75ma & pout-1db = +13dbm typical. ( equivalent to a,b,c,d,e : nc and vd=5v ; g1=+2 .5v ; g2=+1.0v).
CHA2063A 7-13ghz low noise amplifier ref. : dscha20630096 -05-apr-00 10/10 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 package outline 1 2 5 4 3 6 CHA2063A aa/ss yxxxx i o 8.38 4.19 3.50 2.89 0.25 typ. 1.72 typ. pin 1 index unit : mm general tolerance : 0.13 date code 0.68 1.75 max manufacture code u.m.s. ordering information chip form : CHA2063A99f/00 package form : CHA2063Amaf/23 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
|
